RGT40TM65DGC9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

650V

Td (on/off) @ 25°C :

22ns/75ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

204 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Current - Collector Pulsed (Icm) :

60A

Input Type :

Standard

Surface Mount :

No

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

Operating Temperature :

-40°C~175°C TJ

Turn On Time :

51 ns

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Gate Charge :

40nC

Case Connection :

Isolated

Reverse Recovery Time :

58ns

IGBT Type :

Trench Field Stop

Terminal Position :

Single

Test Condition :

400V, 20A, 10 Ω, 15V

Current - Collector (Ic) (Max) :

17A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

39W