RGCL80TK60DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Gate Charge :

98nC

Operating Temperature :

-40°C~175°C TJ

Current - Collector (Ic) (Max) :

35A

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Turn On Time :

114 ns

Number of Elements :

1

Turn Off Time-Nom (toff) :

565 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Test Condition :

400V, 40A, 10 Ω, 15V

Transistor Element Material :

SILICON

IGBT Type :

Trench Field Stop

Td (on/off) @ 25°C :

53ns/227ns

Surface Mount :

No

Number of Terminations :

3

Power - Max :

57W

Voltage - Collector Emitter Breakdown (Max) :

600V

Factory Lead Time :

17 Weeks

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Package / Case :

TO-3PFM, SC-93-3

Reach Compliance Code :

not_compliant

Reverse Recovery Time :

58ns

Published :

2016

Switching Energy :

1.11mJ (on), 1.68mJ (off)

Terminal Position :

Single

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

160A