RF4L055GNTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

9.5 mJ

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Vgs(th) (Max) @ Id :

2.7V @ 1mA

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-N6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

5.5A

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

43m Ω @ 5.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerUDFN

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

22A

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Drain-source On Resistance-Max :

0.066Ohm

Power Dissipation-Max :

2W Ta