RF4L070BGTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Rise Time :

5.7 ns

Power Dissipation (Max) :

2W (Ta)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Manufacturer :

Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Mounting Style :

SMD/SMT

FET Feature :

-

Operating Temperature :

150°C (TJ)

Rds On (Max) @ Id, Vgs :

27mOhm @ 7A, 10V

Power Dissipation :

2W

RoHS :

Details

Vgs (Max) :

±20V

Product Category :

MOSFET

Packaging :

Cut Tape

Minimum Operating Temperature :

- 55 C

Brand :

Rohm Semiconductor

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

7.6 nC @ 10 V

Number of Channels :

1 Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package Type :

HUML2020L8

Mounting Type :

Surface Mount

Configuration :

Single

Package :

Digi-Reel?

Transistor Polarity :

N-Channel

Channel Type :

N

Input Capacitance (Ciss) (Max) @ Vds :

460 pF @ 30 V

Series :

-

Product Type :

MOSFET

FET Type :

N-Channel

Subcategory :

MOSFETs

Continuous Drain Current Id :

7A

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

60 V

Maximum Operating Temperature :

+ 150 C

Package / Case :

8-PowerUDFN

Supplier Device Package :

DFN2020-8S