RDN080N25FU6

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Drain to Source Breakdown Voltage :

250V

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

500m Ω @ 4A, 10V

Power Dissipation :

35W

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

8A

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Configuration :

Single

Operating Temperature :

150°C TJ

Power Dissipation-Max :

35W Tc

RoHS Status :

ROHS3 Compliant