RDN050N20FU6

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Mfr.Part #
RDN050N20FU6
Manufacturer
ROHM Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 200V 5A TO220FN
Stock
12,210
In Stock :
12,210

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
720m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Package / Case :
TO-220-3 Full Pack
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
ECCN Code :
EAR99
Continuous Drain Current (ID) :
5A
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Pbfree Code :
yes
Power Dissipation :
30W
Published :
2006
FET Type :
N-Channel
Power Dissipation-Max :
30W Tc
Gate Charge (Qg) (Max) @ Vgs :
18.6nC @ 10V
Drain to Source Breakdown Voltage :
200V
Input Capacitance (Ciss) (Max) @ Vds :
292pF @ 10V
Packaging :
Bulk
Datasheets
RDN050N20FU6
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RDN050N20FU6 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Mounting Type:Through Hole, RDN050N20FU6 pinout, RDN050N20FU6 datasheet PDF, RDN050N20FU6 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RDN050N20FU6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RDN050N20FU6


N-Channel Bulk 720m Ω @ 2.5A, 10V ±30V 292pF @ 10V 18.6nC @ 10V TO-220-3 Full Pack

RDN050N20FU6 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 292pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.In addition to reducing power consumption, this device uses drive voltage (10V).

RDN050N20FU6 Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 200V voltage


RDN050N20FU6 Applications


There are a lot of ROHM Semiconductor
RDN050N20FU6 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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