RDD022N50TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.7V @ 1mA

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

5.4 Ω @ 1A, 10V

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Rise Time :

17ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

48 ns

Published :

2013

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

168pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Single

Terminal Form :

Gull wing

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

24 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Channels :

1

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation-Max :

20W Tc

Pulsed Drain Current-Max (IDM) :

6A

Operating Temperature :

150°C TJ

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V