RDD050N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Number of Elements :

1

Number of Terminations :

2

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

20A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.72Ohm

Drain to Source Breakdown Voltage :

200V

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation-Max :

20W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e2

FET Type :

N-Channel

Terminal Finish :

Tin/Copper (Sn98Cu2)

Pin Count :

3

Turn-Off Delay Time :

23 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

5A

Max Operating Temperature :

150°C

Power Dissipation :

20W

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

720m Ω @ 2.5A, 10V

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

22ns

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

75 mJ

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

2008

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

292pF @ 10V

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

28 ns

Number of Pins :

3

ECCN Code :

EAR99