RCJ120N25TL

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Mfr.Part #
RCJ120N25TL
Manufacturer
ROHM Semiconductor
Package / Case
SC
Datasheet
Download
Description
MOSFET N-CH 250V 12A LPT
Stock
900
In Stock :
900

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Packaging :
Cut Tape (CT)
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Published :
2016
Rds On Max :
235 mΩ
Continuous Drain Current (ID) :
12A
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
10 Weeks
Avalanche Energy Rating (Eas) :
10.5 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
1.8nF
Reach Compliance Code :
not_compliant
Drain-source On Resistance-Max :
0.235Ohm
Max Power Dissipation :
1.56W
Operating Temperature (Max) :
150°C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
ECCN Code :
EAR99
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
SC
Pulsed Drain Current-Max (IDM) :
48A
Polarity/Channel Type :
N-Channel
Number of Terminations :
2
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
250V
Number of Pins :
83
Datasheets
RCJ120N25TL
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RCJ120N25TL from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC, Number of Terminations:2, Number of Pins:83, RCJ120N25TL pinout, RCJ120N25TL datasheet PDF, RCJ120N25TL amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RCJ120N25TL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RCJ120N25TL


Cut Tape (CT) 250V SC

RCJ120N25TL Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 10.5 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 12A continuous drain current (ID).Peak drain current is 48A, which is the maximum pulsed drain current.For this transistor to work, a voltage 250V is required between drain and source (Vdss).

RCJ120N25TL Features


the avalanche energy rating (Eas) is 10.5 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 250V drain to source voltage (Vdss)


RCJ120N25TL Applications


There are a lot of ROHM Semiconductor
RCJ120N25TL applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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