RCJ120N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.325Ohm

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.56W Ta 40W Tc

Pulsed Drain Current-Max (IDM) :

48A

Drain to Source Voltage (Vdss) :

200V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Avalanche Energy Rating (Eas) :

11.6 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

20 Weeks

Published :

2012

Number of Elements :

1

Terminal Form :

Gull wing

Number of Terminations :

2

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

12A

Number of Pins :

83

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

325m Ω @ 6A, 10V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mount :

Surface Mount

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON