R8008

Manufacturer :

REED Instruments

Product Category :

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.03 Ω @ 4A, 10V

Case Connection :

Isolated

Turn On Delay Time :

32 ns

Package / Case :

TO-220-3 Full Pack

Packaging :

Bulk

Power Dissipation :

50W

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

4.2 mJ

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Element Material :

SILICON

Rise Time :

50ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

32A

Turn-Off Delay Time :

85 ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 1mA

Fall Time (Typ) :

30 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Published :

2011

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

50W Tc

Drain to Source Breakdown Voltage :

800V

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Drain Current-Max (Abs) (ID) :

8A

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB