R6524KNZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

24A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Transistor Application :

SWITCHING

Case Connection :

Isolated

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

72A

Rds On (Max) @ Id, Vgs :

185m Ω @ 11.3A, 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.85nF @ 25V

Avalanche Energy Rating (Eas) :

654 mJ

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 750µA

DS Breakdown Voltage-Min :

650V

Drain-source On Resistance-Max :

0.185Ohm

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Package / Case :

TO-3P-3 Full Pack

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

650V

Power Dissipation-Max :

74W Tc