R6520KNZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 630μA

Power Dissipation-Max :

68W Tc

Drain-source On Resistance-Max :

0.205Ohm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1.55nF @ 25V

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

205m Ω @ 9.5A, 10V

Number of Elements :

1

Case Connection :

Isolated

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

444 mJ

Drain to Source Voltage (Vdss) :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

650V

Terminal Position :

Single

Package / Case :

TO-3P-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

20A

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V