R6524ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Power Dissipation-Max :

74W Tc

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Drain-source On Resistance-Max :

0.185Ohm

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

650V

Avalanche Energy Rating (Eas) :

654 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

72A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 750μA

Drain to Source Voltage (Vdss) :

650V

Drain Current-Max (Abs) (ID) :

24A

Rds On (Max) @ Id, Vgs :

185m Ω @ 11.3A, 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.65nF @ 25V

Package / Case :

TO-3P-3 Full Pack

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ