R6076MNZ1C9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.055Ohm

Pulsed Drain Current-Max (IDM) :

228A

Rds On (Max) @ Id, Vgs :

55m Ω @ 38A, 10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

68.7 mJ

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Terminal Position :

Single

Published :

2017

Power Dissipation-Max :

740W Tc

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Drain Current-Max (Abs) (ID) :

76A

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant