R6076KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1954 mJ

Power Dissipation-Max :

735W Tc

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

42m Ω @ 44.4A, 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

76A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

228A

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.042Ohm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Elements :

1