R6025ANZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Avalanche Energy Rating (Eas) :

39 mJ

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

100A

Packaging :

Tube

Continuous Drain Current (ID) :

25A

Power Dissipation-Max :

150W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.15Ohm

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 10V

Published :

2009

Number of Terminations :

3

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Mount :

Through Hole

FET Type :

N-Channel

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 12.5A, 10V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V