R6020ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Vgs (Max) :

±30V

Turn-Off Delay Time :

230 ns

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

Mount :

Surface Mount

Continuous Drain Current (ID) :

20A

Terminal Form :

Gull wing

Power Dissipation-Max :

100W Tc

FET Type :

N-Channel

Turn On Delay Time :

40 ns

Terminal Finish :

Tin/Copper (Sn/Cu)

Rds On (Max) @ Id, Vgs :

250m Ω @ 10A, 10V

Avalanche Energy Rating (Eas) :

26.7 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Published :

2009

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.25Ohm

Pulsed Drain Current-Max (IDM) :

80A

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Pin Count :

3

Operating Temperature :

150°C TJ

Rise Time :

60ns

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

2

Terminal Position :

Single

Pbfree Code :

yes

Number of Pins :

3

Fall Time (Typ) :

70 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant