R6024KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Type :

N Channel

Drain-Source On-Volt :

600(V)

Rise Time :

50 ns

Power Dissipation :

245(W)

Package :

Tube

Product Type :

MOSFET

Operating Temperature Classification :

Military

Mounting Style :

Through Hole

Package Type :

TO-247

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Operating Temperature :

150°C (TJ)

Operating Temp Range :

-55C to 150C

Number of Elements :

1

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Packaging :

Rail/Tube

Manufacturer :

Rohm Semiconductor

Power Dissipation (Max) :

245W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate-Source Voltage (Max) :

±20(V)

Base Product Number :

R6024

Mounting Type :

Through Hole

Pin Count :

3 +Tab

Number of Channels :

1 Channel

Qualification :

-

Rad Hardened :

No

Product Status :

Active

Product Category :

MOSFET

Package / Case :

TO-247-3

Supplier Device Package :

TO-247

Drain to Source Voltage (Vdss) :

600 V

FET Feature :

-

Channel Mode :

Enhancement

Series :

-

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

RoHS :

Details

Brand :

Rohm Semiconductor

Rds On (Max) @ Id, Vgs :

165mOhm @ 11.3A, 10V

Minimum Operating Temperature :

- 55 C

Continuous Drain Current Id :

24A

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Subcategory :

MOSFETs

Mounting :

Through Hole

Type :

Power MOSFET

Continuous Drain Current :

24(A)

FET Type :

N-Channel

Polarity :

N