R6024KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Operating Temperature :

150°C (TJ)

Power Dissipation :

245(W)

Channel Type :

N Channel

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Base Product Number :

R6024

Vgs(th) (Max) @ Id :

5V @ 1mA

Vgs (Max) :

±20V

Rise Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Qualification :

-

Product Type :

MOSFET

Drain-Source On-Volt :

600(V)

Channel Mode :

Enhancement

Subcategory :

MOSFETs

Type :

Power MOSFET

FET Type :

N-Channel

Operating Temperature Classification :

Military

Mounting :

Through Hole

Mounting Style :

Through Hole

Continuous Drain Current Id :

24A

Pin Count :

3 +Tab

FET Feature :

-

Drain to Source Voltage (Vdss) :

600 V

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Rad Hardened :

No

Number of Channels :

1 Channel

Packaging :

Rail/Tube

Package Type :

TO-247

RoHS :

Details

Continuous Drain Current :

24(A)

Manufacturer :

Rohm Semiconductor

Minimum Operating Temperature :

- 55 C

Series :

-

Power Dissipation (Max) :

245W (Tc)

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

165mOhm @ 11.3A, 10V

Supplier Device Package :

TO-247

Brand :

Rohm Semiconductor

Gate-Source Voltage (Max) :

±20(V)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

Mounting Type :

Through Hole

Number of Elements :

1

Operating Temp Range :

-55C to 150C

Product Category :

MOSFET

Polarity :

N