R6024ENZ1C9
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- Mfr.Part #
- R6024ENZ1C9
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 24A TO247
- Stock
- 33,155
- In Stock ：
- 33,155
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Pulsed Drain Current-Max (IDM) :
- 72A
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 24A
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 4V
- Factory Lead Time :
- 10 Weeks
- Mount :
- Through Hole
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 120W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.165Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 11.3A, 10V
- Avalanche Energy Rating (Eas) :
- 497 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Published :
- 2014
- Datasheets
- R6024ENZ1C9
N-Channel Tube 165m Ω @ 11.3A, 10V ±20V 1650pF @ 25V 70nC @ 10V 600V TO-247-3
R6024ENZ1C9 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 497 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1650pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.As far as peak drain current is concerned, its maximum pulsed current is 72A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6024ENZ1C9 Features
the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 24A
based on its rated peak drain current 72A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6024ENZ1C9 Applications
There are a lot of ROHM Semiconductor
R6024ENZ1C9 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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