R6020KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

20A

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

418 mJ

FET Feature :

Schottky Diode (Isolated)

Factory Lead Time :

18 Weeks

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.196Ohm

Surface Mount :

No

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

196m Ω @ 9.5A, 10V

Power Dissipation-Max :

68W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V