R6020ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

196m Ω @ 9.5A, 10V

Terminal Position :

Single

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Continuous Drain Current (ID) :

20A

Power Dissipation-Max :

120W Tc

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Number of Elements :

1

Package / Case :

TO-3P-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

80A

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V