R6020ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

20A

Operating Temperature :

150°C TJ

Threshold Voltage :

4V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2014

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

418 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1mA

Reach Compliance Code :

not_compliant

Packaging :

Cut Tape (CT)

Drain-source On Resistance-Max :

0.196Ohm

Mounting Type :

Surface Mount

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

60A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

196m Ω @ 9.5A, 10V

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Number of Pins :

83

Power Dissipation-Max :

40W Tc

Number of Terminations :

2