R6015ENX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Published :

2014

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

15A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Threshold Voltage :

4V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

REACH SVHC :

No SVHC

Case Connection :

Isolated

Power Dissipation-Max :

40W Tc

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.29Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Packaging :

Bulk

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.5A, 10V

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Avalanche Energy Rating (Eas) :

284 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Lead Free :

Lead Free

Terminal Position :

Single