R6010ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

10A

Power Dissipation :

50W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

70 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

30 ns

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

30V

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drain-source On Resistance-Max :

0.56Ohm

Mount :

Through Hole

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Rise Time :

30ns

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Power Dissipation-Max :

50W Tc

Case Connection :

Isolated

Turn On Delay Time :

25 ns

Number of Pins :

3