R6015ENJTL

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Mfr.Part #
R6015ENJTL
Manufacturer
ROHM Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 15A LPTS
Stock
80
In Stock :
80

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.29Ohm
Input Capacitance (Ciss) (Max) @ Vds :
910pF @ 25V
Continuous Drain Current (ID) :
15A
FET Type :
N-Channel
Power Dissipation-Max :
40W Tc
Published :
2016
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Rds On (Max) @ Id, Vgs :
290m Ω @ 6.5A, 10V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
600V
Terminal Position :
Single
Factory Lead Time :
20 Weeks
Packaging :
Cut Tape (CT)
Number of Pins :
83
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Lead Free :
Lead Free
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Threshold Voltage :
4V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
600V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
284 mJ
REACH SVHC :
No SVHC
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 1mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
30A
Datasheets
R6015ENJTL
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor R6015ENJTL from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:83, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, R6015ENJTL pinout, R6015ENJTL datasheet PDF, R6015ENJTL amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor R6015ENJTL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor R6015ENJTL


N-Channel Cut Tape (CT) 290m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

R6015ENJTL Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 284 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 910pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).Peak drain current is 30A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R6015ENJTL Features


the avalanche energy rating (Eas) is 284 mJ
a continuous drain current (ID) of 15A
based on its rated peak drain current 30A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


R6015ENJTL Applications


There are a lot of ROHM Semiconductor
R6015ENJTL applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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