R6015ANZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Lead Free :

Lead Free

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Power Dissipation-Max :

110W Tc

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Mount :

Through Hole

Vgs (Max) :

±30V

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

FET Type :

N-Channel

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

300m Ω @ 7.5A, 10V

Case Connection :

Isolated

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

15A

Vgs(th) (Max) @ Id :

4.15V @ 1mA

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

15 mJ

Number of Terminations :

3

Packaging :

Tube

Package / Case :

TO-3P-3 Full Pack

Transistor Element Material :

SILICON