R6012FNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance :

1.3nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lead Free :

Lead Free

Terminal Position :

Single

Drain-source On Resistance-Max :

0.51Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Max Power Dissipation :

50W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Rds On Max :

510 mΩ

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

9.6 mJ

Transistor Element Material :

SILICON

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

48A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Number of Pins :

83

Package / Case :

SC

Continuous Drain Current (ID) :

12A

RoHS Status :

ROHS3 Compliant