R6012ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

420m Ω @ 6A, 10V

Drain-source On Resistance-Max :

0.42Ohm

Power Dissipation-Max :

100W Tc

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Operating Temperature :

150°C TJ

Number of Pins :

3

Lead Free :

Lead Free

Terminal Position :

Single

Mount :

Surface Mount

Turn On Delay Time :

30 ns

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

12A

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

600V

Terminal Finish :

Tin/Copper (Sn/Cu)

Avalanche Energy Rating (Eas) :

9.6 mJ

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

90 ns

FET Type :

N-Channel

JESD-609 Code :

e2

Number of Elements :

1

Rise Time :

30ns

Packaging :

Tape and Reel (TR)

Published :

2009

Fall Time (Typ) :

35 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

48A