R6011KND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

124W Tc

DS Breakdown Voltage-Min :

600V

Number of Terminations :

2

Surface Mount :

yes

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Pulsed Drain Current-Max (IDM) :

33A

Terminal Form :

Gull wing

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.39Ohm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

210 mJ

Drain Current-Max (Abs) (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

390m Ω @ 3.8A, 10V