R6011ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Operating Temperature :

150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

670 pF @ 25 V

Qualification :

-

Configuration :

Single

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Product Type :

MOSFET

Series :

-

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Supplier Device Package :

TO-220FM

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600 V

FET Type :

N-Channel

Maximum Operating Temperature :

+ 155 C

Power Dissipation (Max) :

53W (Tc)

Power Dissipation :

53W

Continuous Drain Current Id :

11A

Subcategory :

MOSFETs

Product Category :

MOSFET

FET Feature :

-

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Transistor Type :

Power MOSFET

Brand :

Rohm Semiconductor

Number of Channels :

1 Channel

Channel Type :

N Channel

RoHS :

Details

Rise Time :

40 ns

Rds On (Max) @ Id, Vgs :

390mOhm @ 3.8A, 10V

Manufacturer :

Rohm Semiconductor

MSL :

MSL 1 - Unlimited

Vgs(th) (Max) @ Id :

4V @ 1mA

Product Status :

Active