R6011ENX
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- Mfr.Part #
- R6011ENX
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A TO220FM
- Stock
- 17,526
- In Stock ：
- 17,526
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- 150°C TJ
- DS Breakdown Voltage-Min :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Published :
- 2014
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Power Dissipation-Max :
- 40W Tc
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 3.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 18 Weeks
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 22A
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 4V
- Package / Case :
- TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 11A
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Datasheets
- R6011ENX
N-Channel Bulk 390m Ω @ 3.8A, 10V ±20V 670pF @ 25V 32nC @ 10V 600V TO-220-3 Full Pack
R6011ENX Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 670pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Peak drain current is 22A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
R6011ENX Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 22A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6011ENX Applications
There are a lot of ROHM Semiconductor
R6011ENX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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