R6011ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

83

Avalanche Energy Rating (Eas) :

210 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Elements :

1

Published :

2016

Rds On (Max) @ Id, Vgs :

390m Ω @ 3.8A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

600V

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Power Dissipation-Max :

40W Tc

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

22A

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

20 Weeks

Terminal Form :

Gull wing

Number of Terminations :

2

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.39Ohm

Continuous Drain Current (ID) :

11A

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant