R6011END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Drain-source On Resistance-Max :

0.39Ohm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

124W Tc

Operating Temperature :

150°C TJ

Terminal Position :

Single

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

390m Ω @ 3.8A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

210 mJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

22A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

yes

FET Type :

N-Channel