QSX8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Collector Emitter Breakdown Voltage :

30V

Max Power Dissipation :

1.25W

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

120mV

Number of Terminations :

6

Transistor Element Material :

SILICON

Transition Frequency :

320MHz

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

320MHz

Max Breakdown Voltage :

30V

Continuous Collector Current :

1A

Number of Pins :

6

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

1A

JESD-609 Code :

e1

Factory Lead Time :

20 Weeks

Terminal Form :

Gull wing

Element Configuration :

Dual

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Base Part Number :

QSX

hFE Min :

270

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Elements :

2

Published :

2004

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

30V

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Mount :

Surface Mount