QST5TR
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- Mfr.Part #
- QST5TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TSMT6
- Stock
- 17,259
- In Stock ：
- 17,259
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Continuous Collector Current :
- -2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1.25W
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Current - Collector (Ic) (Max) :
- 2A
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 6
- Element Configuration :
- Single
- Transition Frequency :
- 280MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -30V
- JESD-609 Code :
- e1
- Max Collector Current :
- 2A
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Base Part Number :
- QST
- Collector Emitter Voltage (VCEO) :
- 370mV
- Gain Bandwidth Product :
- 280MHz
- hFE Min :
- 270
- Collector Emitter Saturation Voltage :
- -180mV
- Number of Pins :
- 6
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Copper, Silver, Tin
- Operating Temperature :
- 150°C TJ
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Datasheets
- QST5TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST5TR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 280MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
QST5TR Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
QST5TR Applications
There are a lot of ROHM Semiconductor
QST5TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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