QS6Z5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transition Frequency :

360MHz

Number of Terminations :

6

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Max Power Dissipation :

1.25W

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Collector Current :

1A

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

50V

Terminal Position :

Dual

JESD-609 Code :

e1

Power - Max :

1.25W

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Published :

2016

Pin Count :

6

Current - Collector Cutoff (Max) :

1μA ICBO

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

350mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

NPN AND PNP

Transistor Type :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 50mA 2V

Mount :

Surface Mount

Frequency - Transition :

360MHz 400MHz

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA