PZT3906T1G
- Mfr.Part #
- PZT3906T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT223
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PZT3906
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector (Ic) (Max) :
- 200mA
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- hFE Min :
- 60
- Turn Off Time-Max (toff) :
- 300ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Collector Emitter Saturation Voltage :
- -400mV
- Number of Terminations :
- 4
- Max Power Dissipation :
- 1.5W
- Max Collector Current :
- 200mA
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 400mV
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 70ns
- Voltage - Rated DC :
- -40V
- Current Rating :
- -200mA
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- -40V
- Mounting Type :
- Surface Mount
- Datasheets
- PZT3906T1G

PNP -55°C~150°C TJ 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT3906T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
PZT3906T1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
PZT3906T1G Applications
There are a lot of ON Semiconductor
PZT3906T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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