PZT3904T1G
- Mfr.Part #
- PZT3904T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT223
- Stock
- 7,277
- In Stock :
- 7,277
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Cut Tape (CT)
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current Rating :
- 200mA
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Width :
- 3.7mm
- Max Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 250ns
- Number of Elements :
- 1
- Base Part Number :
- PZT3904
- Collector Emitter Saturation Voltage :
- 300mV
- Voltage - Rated DC :
- 40V
- Length :
- 6.7mm
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 300MHz
- Pin Count :
- 4
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Published :
- 2006
- Max Power Dissipation :
- 1.5W
- Turn On Time-Max (ton) :
- 70ns
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Transistor Element Material :
- SILICON
- Datasheets
- PZT3904T1G

NPN -55°C~150°C TJ 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
PZT3904T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
PZT3904T1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
PZT3904T1G Applications
There are a lot of ON Semiconductor
PZT3904T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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