PZT3904T1
- Mfr.Part #
- PZT3904T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS GP NPN 200MA 40V SOT223
- Stock
- 4,407
- In Stock :
- 4,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 40V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- 300mV
- Length :
- 6.7mm
- Transition Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 40V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 250ns
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Case Connection :
- COLLECTOR
- Base Part Number :
- PZT3904
- Turn On Time-Max (ton) :
- 70ns
- Max Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Published :
- 2006
- Max Collector Current :
- 200mA
- Current Rating :
- 200mA
- Number of Elements :
- 1
- Frequency :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.65mm
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 40V
- Power Dissipation :
- 1.5W
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Cut Tape (CT)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PZT3904T1

NPN -55°C~150°C TJ 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
PZT3904T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
PZT3904T1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
PZT3904T1G Applications
There are a lot of ON Semiconductor
PZT3904T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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