PZT2907AT3G
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- Mfr.Part #
- PZT2907AT3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT223
- Stock
- 327,652
- In Stock ：
- 327,652
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 4.535924g
- Max Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 600mA
- hFE Min :
- 75
- Pbfree Code :
- yes
- Height :
- 1.65mm
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Polarity/Channel Type :
- PNP
- Width :
- 3.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 200MHz
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Current Rating :
- -600mA
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Published :
- 2006
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Number of Elements :
- 1
- Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Voltage - Rated DC :
- -60V
- Length :
- 6.7mm
- Collector Emitter Saturation Voltage :
- -1.6V
- Number of Terminations :
- 4
- Frequency :
- 200MHz
- Base Part Number :
- PZT2907A
- Collector Emitter Voltage (VCEO) :
- 60V
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- PZT2907AT3G
PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of -1.6V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2907AT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT3G Applications
There are a lot of ON Semiconductor
PZT2907AT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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