PZT2222AT1
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- Mfr.Part #
- PZT2222AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW NPN 600MA 40V SOT223
- Stock
- 14,253
- In Stock ：
- 14,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Max Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Power Dissipation :
- 1.5W
- Pin Count :
- 4
- Number of Elements :
- 1
- hFE Min :
- 35
- Turn Off Time-Max (toff) :
- 285ns
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Max Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 300MHz
- Height :
- 1.57mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Collector Current :
- 600mA
- Width :
- 3.5mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Element Configuration :
- Single
- Frequency :
- 300MHz
- Length :
- 6.5mm
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PZT2222A
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Current Rating :
- 600mA
- Voltage - Rated DC :
- 40V
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Datasheets
- PZT2222AT1
PZT2222AT1 Documents
NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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