PZT2222AT1

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Mfr.Part #
PZT2222AT1
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS SS SW NPN 600MA 40V SOT223
Stock
14,253
In Stock :
14,253

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 19 hours ago)
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
yes
Power Dissipation :
1.5W
Terminal Position :
Dual
Base Part Number :
PZT2222A
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
6V
Voltage - Rated DC :
40V
Element Configuration :
Single
Transistor Type :
NPN
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Pbfree Code :
yes
Current Rating :
600mA
hFE Min :
35
Number of Elements :
1
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Operating Temperature :
-65°C~150°C TJ
REACH SVHC :
No SVHC
Max Collector Current :
600mA
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Case Connection :
COLLECTOR
Pin Count :
4
Number of Pins :
4
Transition Frequency :
300MHz
Transistor Application :
SWITCHING
Max Breakdown Voltage :
40V
Gain Bandwidth Product :
300MHz
Published :
2005
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
75V
Collector Emitter Breakdown Voltage :
40V
Terminal Form :
Gull wing
Current - Collector Cutoff (Max) :
10nA ICBO
Height :
1.57mm
Weight :
4.535924g
ECCN Code :
EAR99
Width :
3.5mm
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Length :
6.5mm
Collector Emitter Saturation Voltage :
1V
Max Power Dissipation :
1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Number of Terminations :
4
Package / Case :
TO-261-4, TO-261AA
Frequency :
300MHz
Collector Emitter Voltage (VCEO) :
40V
Turn Off Time-Max (toff) :
285ns
Datasheets
PZT2222AT1
Introducing Transistors - Bipolar (BJT) - Single onsemi PZT2222AT1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PZT2222A, Mounting Type:Surface Mount, Operating Temperature:-65°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, PZT2222AT1 pinout, PZT2222AT1 datasheet PDF, PZT2222AT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PZT2222AT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PZT2222AT1


NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PZT2222AT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.

PZT2222AT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz


PZT2222AT1G Applications


There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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