PZT2222AT1
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- Mfr.Part #
- PZT2222AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW NPN 600MA 40V SOT223
- Stock
- 14,253
- In Stock ：
- 14,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- PZT2222A
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 600mA
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Terminations :
- 4
- Power Dissipation :
- 1.5W
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Height :
- 1.57mm
- Width :
- 3.5mm
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- Length :
- 6.5mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 75V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2005
- Element Configuration :
- Single
- Number of Elements :
- 1
- Voltage - Rated DC :
- 40V
- Transition Frequency :
- 300MHz
- Contact Plating :
- Tin
- Max Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- hFE Min :
- 35
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 300MHz
- Datasheets
- PZT2222AT1
PZT2222AT1 Documents
NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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