PZT2222AT1

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Mfr.Part #
PZT2222AT1
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS SS SW NPN 600MA 40V SOT223
Stock
14,253
In Stock :
14,253

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 19 hours ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Current - Collector Cutoff (Max) :
10nA ICBO
Operating Temperature :
-65°C~150°C TJ
Base Part Number :
PZT2222A
Peak Reflow Temperature (Cel) :
260
Current Rating :
600mA
Pin Count :
4
Case Connection :
COLLECTOR
Max Power Dissipation :
1.5W
Collector Emitter Voltage (VCEO) :
40V
Number of Terminations :
4
Power Dissipation :
1.5W
Number of Pins :
4
Transistor Type :
NPN
Transistor Application :
SWITCHING
Height :
1.57mm
Width :
3.5mm
REACH SVHC :
No SVHC
Polarity/Channel Type :
NPN
Terminal Position :
Dual
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Radiation Hardening :
No
Max Breakdown Voltage :
40V
Lead Free :
Lead Free
Frequency :
300MHz
Weight :
4.535924g
Pbfree Code :
yes
Length :
6.5mm
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
75V
Emitter Base Voltage (VEBO) :
6V
Collector Emitter Breakdown Voltage :
40V
Published :
2005
Element Configuration :
Single
Number of Elements :
1
Voltage - Rated DC :
40V
Transition Frequency :
300MHz
Contact Plating :
Tin
Max Collector Current :
600mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Mounting Type :
Surface Mount
hFE Min :
35
Transistor Element Material :
SILICON
Surface Mount :
yes
Turn Off Time-Max (toff) :
285ns
Collector Emitter Saturation Voltage :
1V
Package / Case :
TO-261-4, TO-261AA
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
300MHz
Introducing Transistors - Bipolar (BJT) - Single onsemi PZT2222AT1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:PZT2222A, Number of Terminations:4, Number of Pins:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, PZT2222AT1 pinout, PZT2222AT1 datasheet PDF, PZT2222AT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PZT2222AT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PZT2222AT1


NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PZT2222AT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.

PZT2222AT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz


PZT2222AT1G Applications


There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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