PZT2222AT1
- Mfr.Part #
- PZT2222AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW NPN 600MA 40V SOT223
- Stock
- 14,253
- In Stock :
- 14,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Base Part Number :
- PZT2222A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 40V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Current Rating :
- 600mA
- hFE Min :
- 35
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- Number of Pins :
- 4
- Transition Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2005
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Height :
- 1.57mm
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Width :
- 3.5mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Length :
- 6.5mm
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- Datasheets
- PZT2222AT1

NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT1G Applications
There are a lot of ON Semiconductor
PZT2222AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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