PZT2222AT3G
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- Mfr.Part #
- PZT2222AT3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT223
- Stock
- 13,928
- In Stock ：
- 13,928
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Breakdown Voltage :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- hFE Min :
- 35
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.5W
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 40V
- Voltage - Rated DC :
- 40V
- Turn Off Time-Max (toff) :
- 285ns
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Transition Frequency :
- 300MHz
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- PZT2222A
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Published :
- 2009
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 75V
- Max Collector Current :
- 600mA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 300MHz
- Datasheets
- PZT2222AT3G
NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2222AT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PZT2222AT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
PZT2222AT3G Applications
There are a lot of ON Semiconductor
PZT2222AT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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