PZT2907AT1G

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Mfr.Part #
PZT2907AT1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 0.6A SOT223
Stock
651
In Stock :
651

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
Dual
Height :
1.651mm
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
-1.6V
Current - Collector Cutoff (Max) :
10nA ICBO
Package / Case :
TO-261-4, TO-261AA
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Terminal Form :
Gull wing
Number of Terminations :
4
Length :
6.6802mm
Case Connection :
COLLECTOR
Number of Elements :
1
Collector Emitter Breakdown Voltage :
60V
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Transistor Type :
PNP
Surface Mount :
yes
hFE Min :
100
Power Dissipation :
1.5W
Contact Plating :
Tin
Weight :
4.535924g
Pin Count :
4
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Pins :
4
REACH SVHC :
No SVHC
Pbfree Code :
yes
Base Part Number :
PZT2907A
Published :
2006
Width :
3.7084mm
Voltage - Rated DC :
-60V
Collector Emitter Voltage (VCEO) :
60V
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
1.5W
Frequency :
200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Transition Frequency :
200MHz
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Current Rating :
-600mA
Transistor Application :
SWITCHING
Element Configuration :
Single
Gain Bandwidth Product :
200MHz
Max Breakdown Voltage :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
8 Weeks
Collector Base Voltage (VCBO) :
60V
Max Collector Current :
600mA
Lead Free :
Lead Free
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Datasheets
PZT2907AT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi PZT2907AT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Number of Pins:4, Base Part Number:PZT2907A, Operating Temperature:-65°C~150°C TJ, PZT2907AT1G pinout, PZT2907AT1G datasheet PDF, PZT2907AT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PZT2907AT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PZT2907AT1G


PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PZT2907AT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.

PZT2907AT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz


PZT2907AT1G Applications


There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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