PZT2907AT1G
- Mfr.Part #
- PZT2907AT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT223
- Stock
- 651
- In Stock :
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Height :
- 1.651mm
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -1.6V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Length :
- 6.6802mm
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Surface Mount :
- yes
- hFE Min :
- 100
- Power Dissipation :
- 1.5W
- Contact Plating :
- Tin
- Weight :
- 4.535924g
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Base Part Number :
- PZT2907A
- Published :
- 2006
- Width :
- 3.7084mm
- Voltage - Rated DC :
- -60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1.5W
- Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transition Frequency :
- 200MHz
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -600mA
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 200MHz
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 600mA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PZT2907AT1G

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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