PZT2907AT1G
- Mfr.Part #
- PZT2907AT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT223
- Stock
- 651
- In Stock :
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Weight :
- 4.535924g
- Power Dissipation :
- 1.5W
- Transistor Type :
- PNP
- Max Collector Current :
- 600mA
- Transition Frequency :
- 200MHz
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Frequency :
- 200MHz
- Current Rating :
- -600mA
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Pin Count :
- 4
- Length :
- 6.6802mm
- Base Part Number :
- PZT2907A
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -1.6V
- Width :
- 3.7084mm
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 100
- Height :
- 1.651mm
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 200MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- PZT2907AT1G

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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