PUMB3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTOR

Resistor - Base (R1) :

4.7k Ω

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Polarity/Channel Type :

PNP

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power - Max :

300mW

Packaging :

Tape and Reel (TR)

Base Part Number :

MB3

Pin Count :

6

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA

Current - Collector (Ic) (Max) :

100mA

Operating Temperature (Max) :

150°C

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transistor Type :

2 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON