PUMB11,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Polarity :

PNP

Base Part Number :

MB11

Radiation Hardening :

No

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Number of Terminations :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

JESD-609 Code :

e3

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Mount :

Surface Mount

Pin Count :

6