PUMB11,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Published :

2011

Polarity :

PNP

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10k Ω

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Pin Count :

6

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Elements :

2

Base Part Number :

MB11

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Number of Terminations :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant