PUMB11,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

Pin Count :

6

Resistor - Emitter Base (R2) :

10k Ω

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

300mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

Element Configuration :

Dual

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Polarity :

PNP

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C

Base Part Number :

MB11

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2011

Max Collector Current :

100mA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

Number of Terminations :

6