PUMB19,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

1μA

Resistor - Base (R1) :

22k Ω

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Min Operating Temperature :

-65°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Number of Pins :

6

Base Part Number :

MB19

Mounting Type :

Surface Mount

Element Configuration :

Dual

Max Power Dissipation :

300mW

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Number of Elements :

2

ECCN Code :

EAR99

Number of Terminations :

6