PSMN3R3-40YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

4.5mOhm

RoHS Status :

ROHS3 Compliant

Published :

2010

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

4

Rise Time :

21ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

117W Tc

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 10V

Pin Count :

4

Turn-Off Delay Time :

38 ns

Max Dual Supply Voltage :

40V

JEDEC-95 Code :

MO-235

Package / Case :

SC-100, SOT-669

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

2754pF @ 20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Power Dissipation :

117W

Fall Time (Typ) :

14 ns

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Case Connection :

DRAIN

Radiation Hardening :

No

Terminal Form :

Gull wing