PMSTA56,115
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- Mfr.Part #
- PMSTA56,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT323
- Stock
- 4,954
- In Stock ：
- 4,954
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 4V
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transition Frequency :
- 50MHz
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Datasheets
- PMSTA56,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA56,115 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PMSTA56,115 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 50MHz
PMSTA56,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA56,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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