PMSTA56,115
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- Mfr.Part #
- PMSTA56,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT323
- Stock
- 4,954
- In Stock ：
- 4,954
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pin Count :
- 3
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transition Frequency :
- 50MHz
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Datasheets
- PMSTA56,115
PMSTA56,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA56,115 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PMSTA56,115 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 50MHz
PMSTA56,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA56,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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