PMSTA55,115
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- Mfr.Part #
- PMSTA55,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMSTA55 - SMALL SIG
- Stock
- 16,800
- In Stock ：
- 16,800
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Datasheets
- PMSTA55,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA55,115 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 500mA volts.
PMSTA55,115 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 50MHz
PMSTA55,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA55,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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